SK Hynix announced today, August 29, that it has successfully developed the industry’s first sixth-generation 10-nanometer (1c nm) DDR5 DRAM memory. Additionally, the company confirmed that the 1c nm process technology will be implemented across several other DRAM memory products.
Kim Jong-hwan, Vice President of DRAM Development at SK Hynix, stated in a press release that the 1c process technology offers the highest levels of performance and cost efficiency.
This advanced technology will be applied to the most cutting-edge DRAM products, including the next-generation HBM, LPDDR6, and GDDR7, providing unique value to their customers.
Looking ahead, SK Hynix intends to maintain its leadership position in the DRAM market and strengthen its reputation as the most reliable AI memory solution provider for its customers.
During his speech, Kim Jong-hwan specifically mentioned the product generations for LPDDR and GDDR that will use the 1c nm process. However, he did not specify the generation for the HBM products.
Previous reports have indicated that SK Hynix’s HBM4E memory is likely to utilize 32Gb DRAM die produced with the 1c nm process. Additionally, there have been internal discussions at SK Hynix about introducing 1c nm DRAM into HBM4 products.
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